3 rd Workshop on Defect Analysis
  in Silicon Detectors
Hamburg
April 2008
Location: DESY area, Bldg. 68, Room125


List of Participants Programme


Thursday, 17. April 2008

TSC-studies on isothermal annealing of neutron- and proton-irradiated EPI-diodes: Understanding of reverse annealing. abstract
Ioana Pintilie
DLTS-studies of neutron-irradiated MCz Si-diodes abstract
Bengt Gunnar Svensson
Evaluation of defect cluster parameters from DLTS measurements of neutron-irradiated Si-detectors abstract
Leonid Makarenko
Isochronal annealing of neutron-irradiated FZ- and MCz-Si-diodes – defect analysis as studied by TSC and DLTS abstract
Alexandra Junkes
Stable self-interstitial-oxygen-related defects in Si: what we can infer from FTIR studies abstract
Leonid Murin
Quantitative production of optical centers in neutron-irradiated silicon abstract
Gordon Davis
Photoluminescence studies of defect centers introduced in MCz-Si and FZ-Si by high-fluence neutron irradiation abstract
Barbara Suma
EPR studies of defect centers introduced in MCz-Si and FZ-Si by high fluence neutron irradiation abstract
Mariusz Pawlowski

Friday, 18. April 2008

High resolution photoinduced transient spectroscopy of defect centers in MCz-Si and FZ-Si by high fluence neutron irradiation abstract
Jaroslaw Zelasko
Recent investigations of recombination characteristics abstract
Eugenijus Gaubas
Analysis of deep level system transformation by photoconductivity spectra measurements abstract
Juozas Vaitkus
Influence of annealing on inhomogeneity of irradiated Si by means of Hall- and magnetoresistance-effects abstract
Juozas Vaitkus
Comparison of damage effects in MCz- and FZ-Si-diodes after neutron irradiation: influence of material and thickness abstract
Eckhart Fretwurst
Annealing studies on MCz and FZ Si-diodes after 23 GeV proton irradiation abstract
Katharina Kaska
Isochronal annealing of  neutron-irradiated FZ- and MCz-Si-diodes: effect on the trapping times for electrons and holes abstract talk with comments
 Marie Kristin Bock

Investigation of Trapping Effects in Proton-Irradiated Epitaxial Silicon Diodes

 abstract
Jörn Lange
Charge collection measurements on n- and p-type MCz and FZ Si-diodes after neutron, proton and pion irradiation abstract
Gregor Kramberger
TRIGA irradiation characteristics, from the measured neutron spectrum to the Si-recoil energy distribution abstract
Gunnar Lindström